ilct6/ mct6 document number 83645 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179016 1 2 3 4 8 7 6 5 e c c e a c c a pb p b -free e3 optocoupler, phototransistor output, dual channel features ? current transfer ratio, 50 % typical leakage current, 1.0 na typical two isolated channels per package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 csa 93751 bsi iec60950 iec60065 description the ilct6/ mct6 is a two channel optocoupler for high density applications. each channel consists of an optically coupled pair with a gallium arsenide infrared led and a silicon npn phototransistor. sig- nal information, including a dc level, can be transmit- ted by the device while maintaining a high degree of electrical isolation between input and output. the ilct6/ mct6 is especially designed for driving medium-speed logic, where it may be used to elimi- nate troublesome ground loop and noise problems. it can also be used to replace relays and transformers in many digital interface applications, as well as ana- log applications such as crt modulation. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks ilct6 ctr 20 %, dip-8 mct6 ctr 20 %, dip-8 ilct6-x007 ctr 20 %, smd-8 (option 7) ILCT6-X009 ctr 20 %, smd-8 (option 9) mct6-x007 ctr 20 %, smd-8 (option 7) mct6-x009 ctr 20 %, smd-8 (option 9) parameter test condition symbol value unit rated forward current, dc 60 ma peak forward current, dc 1.0 s pulse, 300 pps i fm 3.0 a power dissipation p diss 100 mw derate linearly from 25 c 1.3 mw/c
www.vishay.com 2 document number 83645 rev. 1.4, 26-oct-04 ilct6/ mct6 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector current i c 30 ma collector-emitter breakdown voltage bv ceo 30 v power dissipation p diss 150 mw derate linearly from 25 c 2mw/c parameter test condition symbol value unit isolation test voltage v iso 5300 v rms isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? creepage 7.0 mm clearance 7.0 mm total package dissipation p tot 400 mw derate linearly from 25 c 5.33 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 20 ma v f 1.25 1.50 v reverse current v r = 3.0 v i r 0.1 10 a junction capacitance v f = 0 v c j 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 10 a, i e = 10 abv ceo 30 65 v emitter-collector breakdown voltage i c = 10 a, i e = 10 abv eco 7.0 10 v collector-emitter leakage current v ce = 10 v i ceo 1.0 100 na collector-emitter capacitance v ce = 0 v c ce 8.0 pf
ilct6/ mct6 document number 83645 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit saturation voltage, collector- emitter i c = 2.0 ma, i f = 16 ma v cesat 0.40 v capacitance (input-output) f = 1.0 mhz c io 0.5 pf capacitance between channels f = 1.0 mhz 0.4 pf bandwidth i c = 2.0 ma, v cc = 10 v, r l = 100 ? 150 khz parameter test condition symbol min ty p. max unit dc current transfer ratio i f = 10 ma, v ce = 10 v ctr dc 20 50 % parameter test condition symbol min ty p. max unit switching times, output transistor i c = 2.0 ma, r e = 100 ? , v ce = 10 v t on , t off 3.0 s figure 1. forward voltage vs. forward current iilct6_01 if - forward current - ma 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1. 3 1.4 vf - forward voltage - v ta = C55c ta = 25c ta = 85c figure 2. normalized non-saturated and saturated ctr vs. led current iilct6_02 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v
www.vishay.com 4 document number 83645 rev. 1.4, 26-oct-04 ilct6/ mct6 vishay semiconductors figure 3. normalized non-satura ted and saturated ctr vs. led current figure 4. normalized non-satura ted and saturated ctr vs. led current figure 5. normalized non-satura ted and saturated ctr vs. led current iilct6_03 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce =10v,i f = 10 ma, t a = 25c t a = 50c ctrce(sat) v ce = 0.4 v iilct6_04 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr(sat) nctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v t a = 70c nctr - normalized ctr iilct6_05 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sat) nctr normalized to: v ce =10 v,i f = 10 ma, t a = 25c ctrce(sat) v ce = 0.4 v t a = 85c figure 6. collector-emitter current vs. temperature and led current figure 7. collector-emitter leakage current vs.temp. figure 8. propagation delay vs. collector load resistor iilct6_06 60 50 30 20 10 0 0 5 10 15 20 25 30 35 50c 70c 85c i f - led current - ma i ce - collector current - ma 25c 40 iilct6_07 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 t a - ambient temperature - c i ceo - collector-emitter - na vce=10v typical iilct6_08 r l - collector load resistor - k ? 100 10 1 .1 1 10 100 1000 1.0 1.5 2.0 2.5 tplh tphl t plh - propagation delay s t phl - propagation delay s ta = 25c, if = 10 ma vcc=5v,vth=1.5v
ilct6/ mct6 document number 83645 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) figure 9. switching timing iilct6_09 t d t r 50% phl t plh t s t f t i f v o fire 10.sitchinschematic iilct6_10 f = 10 khz, d f = 50% i f =10ma v cc =5v r l =75 ? v o i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a
www.vishay.com 6 document number 83645 rev. 1.4, 26-oct-04 ilct6/ mct6 vishay semiconductors .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
ilct6/ mct6 document number 83645 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
|
